| PART |
Description |
Maker |
| ECJ-2VB1H104K ECJ-2VB1H103K ERJ-8GEY0R00 ERJ-8GEYJ |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| MAPG-S22729-350L00 MAPG-002729-350L00 |
S-Band 350 W Radar Pulsed Power GaN Pallet
|
M/A-COM Technology Solu...
|
| RF3934 |
GaN WIDE-BAND POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
| ECE-V1HA101UP RF3933TR7 EEV-TG2A101M ERJ-8GEYJ100V |
90W GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA3832 |
10W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| MAGX-001214-500L00-V2 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
| MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MAGX-000912-250L00 MAGX-000912-SB1PPR |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| AFS3-00101200-35-ULN AFS3-00100600-20-ULN AFS3-020 |
100 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
2700 MHz - 3100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| 2731-20 |
Pulsed Power S-Band (Si)
|
Microsemi
|
